Document Detail


Deep-UVsensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.
MedLine Citation:
PMID:  21859589     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.
Authors:
Chipta Laksana; Meei-Ru Chen; Yen Liang; An-Jyeg Tzou; Hui-Ling Kao; Erik Jeng; Jyh Chen; Hou-Guang Chen; Sheng-Rui Jian
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  IEEE transactions on ultrasonics, ferroelectrics, and frequency control     Volume:  58     ISSN:  1525-8955     ISO Abbreviation:  IEEE Trans Ultrason Ferroelectr Freq Control     Publication Date:  2011 Aug 
Date Detail:
Created Date:  2011-08-23     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9882735     Medline TA:  IEEE Trans Ultrason Ferroelectr Freq Control     Country:  United States    
Other Details:
Languages:  eng     Pagination:  1688-93     Citation Subset:  IM    
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