Document Detail


Current-induced magnetic domain wall motion below intrinsic threshold triggered by Walker breakdown.
MedLine Citation:
PMID:  22961306     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Controlling the position of a magnetic domain wall with electric current may allow for new types of non-volatile memory and logic devices. To be practical, however, the threshold current density necessary for domain wall motion must be reduced below present values. Intrinsic pinning due to magnetic anisotropy, as recently observed in perpendicularly magnetized Co/Ni nanowires, has been shown to give rise to an intrinsic current threshold J(th)(0). Here, we show that domain wall motion can be induced at current densities 40% below J(th)(0) when an external magnetic field of the order of the domain wall pinning field is applied. We observe that the velocity of the domain wall motion is the vector sum of current- and field-induced velocities, and that the domain wall can be driven against the direction of a magnetic field as large as 2,000 Oe, even at currents below J(th)(0). We show that this counterintuitive phenomenon is triggered by Walker breakdown, and that the additive velocities provide a unique way of simultaneously determining the spin polarization of current and the Gilbert damping constant.
Authors:
T Koyama; K Ueda; K-J Kim; Y Yoshimura; D Chiba; K Yamada; J-P Jamet; A Mougin; A Thiaville; S Mizukami; S Fukami; N Ishiwata; Y Nakatani; H Kohno; K Kobayashi; T Ono
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-9-09
Journal Detail:
Title:  Nature nanotechnology     Volume:  -     ISSN:  1748-3395     ISO Abbreviation:  Nat Nanotechnol     Publication Date:  2012 Sep 
Date Detail:
Created Date:  2012-9-10     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101283273     Medline TA:  Nat Nanotechnol     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Affiliation:
Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto, 611-0011, Japan.
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