| Cryogenic ultra-low-noise SiGe transistor amplifier. | |
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MedLine Citation:
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PMID: 22047315 Owner: NLM Status: In-Data-Review |
Abstract/OtherAbstract:
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An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ∼50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers. |
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Authors:
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B I Ivanov; M Trgala; M Grajcar; E Il'ichev; H-G Meyer |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: The Review of scientific instruments Volume: 82 ISSN: 1089-7623 ISO Abbreviation: Rev Sci Instrum Publication Date: 2011 Oct |
Date Detail:
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Created Date: 2011-11-03 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0405571 Medline TA: Rev Sci Instrum Country: United States |
Other Details:
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Languages: eng Pagination: 104705 Citation Subset: IM |
Affiliation:
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Institute of Photonic Technology, PO Box 100239, D-07702 Jena, GermanyNovosibirsk State Technical University, K.Marx-Av.20, Novosibirsk 630092, RussiaDepartment of Experimental Physics, Comenius University, SK-84248 Bratislava, Slovakia. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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