Document Detail

Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography.
MedLine Citation:
PMID:  19543335     Owner:  NLM     Status:  PubMed-not-MEDLINE    
As critical dimensions for leading-edge semiconductor devices shrink, the line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern. Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV microfield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.
Patrick P Naulleau
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Applied optics     Volume:  48     ISSN:  1539-4522     ISO Abbreviation:  Appl Opt     Publication Date:  2009 Jun 
Date Detail:
Created Date:  2009-06-22     Completed Date:  2009-09-02     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0247660     Medline TA:  Appl Opt     Country:  United States    
Other Details:
Languages:  eng     Pagination:  3302-7     Citation Subset:  -    
Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
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