Document Detail


Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography.
MedLine Citation:
PMID:  19543335     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Abstract/OtherAbstract:
As critical dimensions for leading-edge semiconductor devices shrink, the line-edge roughness (LER) requirements are pushing well into the single digit nanometer regime. At these scales many new sources of LER must be considered. In the case of extreme ultraviolet (EUV) lithography, modeling has shown the lithographic mask to be a source of significant concern. Here we present a correlation-based methodology for experimentally measuring the magnitude of mask contributors to printed LER. The method is applied to recent printing results from a 0.3 numerical aperture EUV microfield exposure tool. The measurements demonstrate that such effects are indeed present and of significant magnitude. The method is also used to explore the effects of illumination coherence and defocus and has been used to verify model-based predictions of mask-induced LER.
Authors:
Patrick P Naulleau
Related Documents :
15069425 - Reliability of a semi-quantitative method for dermal exposure assessment (dream).
11548335 - The italian national survey of aircrew exposure: ii. on-board measurements and results.
15450715 - Reevaluation of mortality risks from leukemia in the formaldehyde cohort study of the n...
12486775 - Variation in exposure levels for high hazard frequently monitored agents.
15070505 - Estimating the temporal interval entropy of neuronal discharge.
24023925 - The significance of shifts in precipitation patterns: modelling the impacts of climate ...
Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Applied optics     Volume:  48     ISSN:  1539-4522     ISO Abbreviation:  Appl Opt     Publication Date:  2009 Jun 
Date Detail:
Created Date:  2009-06-22     Completed Date:  2009-09-02     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0247660     Medline TA:  Appl Opt     Country:  United States    
Other Details:
Languages:  eng     Pagination:  3302-7     Citation Subset:  -    
Affiliation:
Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA. pnaulleau@lbl.gov
Export Citation:
APA/MLA Format     Download EndNote     Download BibTex
MeSH Terms
Descriptor/Qualifier:

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


Previous Document:  Expansion of field of view in digital in-line holography with a programmable point source.
Next Document:  Phase reconstruction of digital holography with the peak of the two-dimensional Gabor wavelet transf...