Document Detail

Control of InAs nanowire growth directions on Si.
MedLine Citation:
PMID:  18783279     Owner:  NLM     Status:  PubMed-not-MEDLINE    
We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.
Katsuhiro Tomioka; Junichi Motohisa; Shinjiroh Hara; Takashi Fukui
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't     Date:  2008-09-11
Journal Detail:
Title:  Nano letters     Volume:  8     ISSN:  1530-6984     ISO Abbreviation:  Nano Lett.     Publication Date:  2008 Oct 
Date Detail:
Created Date:  2008-10-08     Completed Date:  2008-11-18     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088070     Medline TA:  Nano Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  3475-80     Citation Subset:  -    
Graduate School of Information Science and Technology, Hokkaido University, North14 West9, 060-0814, Sapporo, Japan.
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