| Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors. | |
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MedLine Citation:
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PMID: 22278999 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency. |
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Authors:
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Ben B Y Hsu; Chunhui Duan; Ebinazar B Namdas; Andrea Gutacker; Jonathan D Yuen; Fei Huang; Yong Cao; Guillermo C Bazan; Ifor D W Samuel; Alan J Heeger |
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Publication Detail:
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Type: JOURNAL ARTICLE Date: 2012-1-26 |
Journal Detail:
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Title: Advanced materials (Deerfield Beach, Fla.) Volume: - ISSN: 1521-4095 ISO Abbreviation: - Publication Date: 2012 Jan |
Date Detail:
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Created Date: 2012-1-26 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 9885358 Medline TA: Adv Mater Country: - |
Other Details:
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Languages: ENG Pagination: - Citation Subset: - |
Copyright Information:
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Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
Affiliation:
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Center for Polymers and Organic Solids, University of California, Santa Barbara, USA. |
Export Citation:
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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