Document Detail

Control of Efficiency, Brightness, and Recombination Zone in Light-Emitting Field Effect Transistors.
MedLine Citation:
PMID:  22278999     Owner:  NLM     Status:  Publisher    
The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.
Ben B Y Hsu; Chunhui Duan; Ebinazar B Namdas; Andrea Gutacker; Jonathan D Yuen; Fei Huang; Yong Cao; Guillermo C Bazan; Ifor D W Samuel; Alan J Heeger
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-1-26
Journal Detail:
Title:  Advanced materials (Deerfield Beach, Fla.)     Volume:  -     ISSN:  1521-4095     ISO Abbreviation:  -     Publication Date:  2012 Jan 
Date Detail:
Created Date:  2012-1-26     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9885358     Medline TA:  Adv Mater     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Copyright Information:
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Center for Polymers and Organic Solids, University of California, Santa Barbara, USA.
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