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Conductivity oscillation of surface state of three-dimensional topological insulators induced by a linearly polarized terahertz field.
MedLine Citation:
PMID:  24080760     Owner:  NLM     Status:  Publisher    
We have theoretically studied the longitudinal dc conductivity of the surface state of three-dimensional (3D) topological insulators (TIs) under a linearly polarized (LP) terahertz (THz) field irradiation via the Floquet theory and Green's function technique. It was found that, due to the anisotropic quasienergy spectrum under the LP light, the longitudinal conductivities parallel and perpendicular to the polarized direction of the LP light are not the same. When the 3D TI's chemical potential is zero, both of the conductivities undergo an oscillation against the electron-field interaction parameter because of the contribution of the photon modulated side-band transport at different position. The oscillation is dramatically suppressed when the chemical potential is higher or lower than zero. There is a pronounced dip in the dc conductivity at a specific field frequency twice the chemical potential, which can be seen as a gap-induced metal-to-insulator transition of the surface state of 3D TIs. As the dc conductivity of the surface state of 3D TIs has such a pronounced response to the LP THz field, our investigations involving the interaction between TIs and LP THz field actually provided the possibility of TI application in THz devices.
J M Shao; H Li; G W Yang
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2013-9-30
Journal Detail:
Title:  Journal of physics. Condensed matter : an Institute of Physics journal     Volume:  25     ISSN:  1361-648X     ISO Abbreviation:  J Phys Condens Matter     Publication Date:  2013 Oct 
Date Detail:
Created Date:  2013-10-2     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101165248     Medline TA:  J Phys Condens Matter     Country:  -    
Other Details:
Languages:  ENG     Pagination:  425603     Citation Subset:  -    
State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, Nanotechnology Research Center, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, People's Republic of China.
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