Document Detail

Conductance quantization and synaptic behavior in a Ta(2)O(5)-based atomic switch.
MedLine Citation:
PMID:  23059954     Owner:  NLM     Status:  In-Data-Review    
Quantized conductance was observed in a cation-migration-based resistive switching memory cell with a simple metal-insulator-metal (MIM) structure using a thin Ta(2)O(5) layer. The observed conductance changes are attributed to the formation and dissolution of a metal filament with an atomic point contact of different integer multiples in the Ta(2)O(5) layer. The results demonstrate that atomic point contacts can be realized in an oxide-based MIM structure that functions as a nanogap-based atomic switch (Terabe et al 2005 Nature 433 47). By applying consecutive voltage pulses at periodic intervals of different times, we also observed an effect analogous to the long-term potentiation of biological synapses, which shows that the oxide-based atomic switch has potential for use as an essential building block of neural computing systems.
Tohru Tsuruoka; Tsuyoshi Hasegawa; Kazuya Terabe; Masakazu Aono
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Publication Detail:
Type:  Journal Article     Date:  2012-10-11
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-10-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  435705     Citation Subset:  IM    
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, 7 Gobancho, Chiyoda-ku, Tokyo 102-0075, Japan.
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