| Conductance quantization and synaptic behavior in a Ta(2)O(5)-based atomic switch. | |
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MedLine Citation:
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PMID: 23059954 Owner: NLM Status: In-Data-Review |
Abstract/OtherAbstract:
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Quantized conductance was observed in a cation-migration-based resistive switching memory cell with a simple metal-insulator-metal (MIM) structure using a thin Ta(2)O(5) layer. The observed conductance changes are attributed to the formation and dissolution of a metal filament with an atomic point contact of different integer multiples in the Ta(2)O(5) layer. The results demonstrate that atomic point contacts can be realized in an oxide-based MIM structure that functions as a nanogap-based atomic switch (Terabe et al 2005 Nature 433 47). By applying consecutive voltage pulses at periodic intervals of different times, we also observed an effect analogous to the long-term potentiation of biological synapses, which shows that the oxide-based atomic switch has potential for use as an essential building block of neural computing systems. |
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Authors:
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Tohru Tsuruoka; Tsuyoshi Hasegawa; Kazuya Terabe; Masakazu Aono |
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Publication Detail:
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Type: Journal Article Date: 2012-10-11 |
Journal Detail:
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Title: Nanotechnology Volume: 23 ISSN: 1361-6528 ISO Abbreviation: Nanotechnology Publication Date: 2012 Nov |
Date Detail:
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Created Date: 2012-10-12 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101241272 Medline TA: Nanotechnology Country: England |
Other Details:
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Languages: eng Pagination: 435705 Citation Subset: IM |
Affiliation:
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International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, 7 Gobancho, Chiyoda-ku, Tokyo 102-0075, Japan. |
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