| Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer. | |
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MedLine Citation:
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PMID: 21165106 Owner: NLM Status: In-Process |
Abstract/OtherAbstract:
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Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects. |
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Authors:
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Tzu-Chun Lu; Min-Yung Ke; Sheng-Chieh Yang; Yun-Wei Cheng; Liang-Yi Chen; Guan-Jhong Lin; Yu-Hsin Lu; Jr-Hau He; Hao-Chung Kuo; JianJang Huang |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Optics letters Volume: 35 ISSN: 1539-4794 ISO Abbreviation: Opt Lett Publication Date: 2010 Dec |
Date Detail:
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Created Date: 2010-12-17 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 7708433 Medline TA: Opt Lett Country: United States |
Other Details:
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Languages: eng Pagination: 4109-11 Citation Subset: - |
Affiliation:
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Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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