| Characterization of AlF3 thin films at 193 nm by thermal evaporation. | |
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MedLine Citation:
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PMID: 16353803 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing after coating. The optical property (the transmittance, refractive index, extinction coefficient, and optical loss) at 193 nm, microstructure (the cross-sectional morphology, surface roughness, and crystalline structure), mechanical property (stress), and LIDT of AlF3 thin films have been studied. AlF3 thin films deposited at a high substrate temperature and low deposition rate showed a lower optical loss. The highest LIDT occurred at the substrate temperature of 150 degrees C. The LIDT of the films prepared at a deposition rate of 2 A/s was higher than that at other deposition rates. The annealing process did not influence the optical properties too much, but it did increase the LIDT and stress. |
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Authors:
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Cheng-Chung Lee; Ming-Chung Liu; Masaaki Kaneko; Kazuhide Nakahira; Yuuichi Takano |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Applied optics Volume: 44 ISSN: 0003-6935 ISO Abbreviation: - Publication Date: 2005 Dec |
Date Detail:
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Created Date: 2005-12-15 Completed Date: 2006-01-12 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0247660 Medline TA: Appl Opt Country: United States |
Other Details:
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Languages: eng Pagination: 7333-8 Citation Subset: - |
Affiliation:
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Thin Film and Technology Center and Institute of Optical Sciences, National Central University, Chung-Li 320, Taiwan. cclee@ios.ncu.edu.tw |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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