Document Detail


Characteristics and fabrication of vertical type organic light emitting transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer and light emitting polymer.
MedLine Citation:
PMID:  21456290     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
We have investigated electrical properties of vertical type organic transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer. And also, the contact resistance Ro for charge injection from a metal electrode to an organic semiconductor layer was studied by transfer line method. The radiance of organic light emitting transistor (OLET) consisting of glass/ITO (drain)/PEDOT:PSS/MEH-PPV/DMDCNQI/Al (gate)/DMDCNQI/Au (source) can be effectively controlled by applying gate voltage like depletion mode.
Authors:
Hee-Suk Jin; Hyun-Sik Min; Takehiko Mori; Se-Young Oh
Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  11     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2011 Feb 
Date Detail:
Created Date:  2011-04-01     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  1779-82     Citation Subset:  IM    
Affiliation:
Department of Chemical and Biomolecular Engineering, Sogang University, Sinsu-dong, Mapo-gu, Seoul 121-172, Korea.
Export Citation:
APA/MLA Format     Download EndNote     Download BibTex
MeSH Terms
Descriptor/Qualifier:

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


Previous Document:  Effect of content of Mg(NO3)2 x 6H2O on fabrication of alpha-alumina nanopowders by thermal decompos...
Next Document:  Electronic structure study on the electroluminescent properties of fully substituted ethylene deriva...