Document Detail


Cause and Prevention of Moisture-Induced Degradation of Resistance-Random-Access-Memory Nano Devices.
MedLine Citation:
PMID:  23406515     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Dielectric thin films in nanodevices may absorb moisture leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance-random-access-memory (RRAM). Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise non-wetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H(2)O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, they can be completely prevented by eliminating nanoporosity, depositing a barrier layer or using an oxidation resistant electrode. These findings provide insight for understanding high performance memory and field-assisted degradation of nanodevices.
Authors:
Xiang Yang; Byung Joon Choi; Albert B K Chen; I-Wei Chen
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2013-2-13
Journal Detail:
Title:  ACS nano     Volume:  -     ISSN:  1936-086X     ISO Abbreviation:  ACS Nano     Publication Date:  2013 Feb 
Date Detail:
Created Date:  2013-2-14     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101313589     Medline TA:  ACS Nano     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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