| Carrier recombination under one-photon and two-photon excitation in GaN epilayers. | |
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MedLine Citation:
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PMID: 18316196 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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Luminescence properties of 100-mum thick GaN epilayers grown by hydride vapor phase epitaxy (HVPE) over three different substrates: high-pressure grown n-type bulk GaN (HP-n-GaN), high-pressure bulk GaN doped with magnesium (HP-GaN:Mg), and free-standing HVPE lifted-off from sapphire (FS-HVPE-GaN), were compared by means of one-photon and two-photon excitations. The contribution of carrier capture to nonradiative traps was estimated by the analysis of luminescence transients with carrier diffusion taken into account. The estimated values of carrier lifetime of about 3ns and diffusion coefficient of 1cm(2)/s indicate the highest quality of GaN epilayers on FS-HVPE-GaN substrates. |
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Authors:
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S Miasojedovas; M Butkus; S Jursenas; B Lucznik; I Grzegory; T Suski |
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Publication Detail:
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Type: Journal Article; Research Support, Non-U.S. Gov't Date: 2008-02-02 |
Journal Detail:
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Title: Micron (Oxford, England : 1993) Volume: 40 ISSN: 0968-4328 ISO Abbreviation: Micron Publication Date: 2009 Jan |
Date Detail:
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Created Date: 2009-01-01 Completed Date: 2009-03-12 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 9312850 Medline TA: Micron Country: England |
Other Details:
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Languages: eng Pagination: 118-21 Citation Subset: - |
Affiliation:
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Institute of Material Science and Applied Research, Sauletekio 9, III building, Vilnius LT 10222, Lithuania. saulius.miasojedovas@ff.vu.lt |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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