Document Detail


Band Gap Engineering of Chemical Vapor Deposited Graphene by in-situ BN Doping.
MedLine Citation:
PMID:  23273110     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great details. X-ray photoelectron, micro-Raman and UV-Vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of Π-Π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene based devices.
Authors:
Cheng-Kai Chang; Satender Kataria; Chun-Chiang Kuo; Abhijit Ganguli; Bo-Yao Wang; Jeong-Yuan Hwang; Kay-Jay Huang; Wei-Hsun Yang; Sheng-Bo Wang; Cheng-Hao Chuang; Mi Chen; Ching-I Huang; Way-Faung Pong; Ker-Jar Song; Shoou-Jinn Chang; Jinghua Guo; Yian Tai; Masahiko Tsujimoto; Seiji Isoda; Chun-Wei Chen; Li-Chyong Chen; Kuei-Hsien Chen
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-12-30
Journal Detail:
Title:  ACS nano     Volume:  -     ISSN:  1936-086X     ISO Abbreviation:  ACS Nano     Publication Date:  2012 Dec 
Date Detail:
Created Date:  2012-12-31     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101313589     Medline TA:  ACS Nano     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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