| Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: a confined water effect? | |
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MedLine Citation:
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PMID: 22481249 Owner: NLM Status: In-Data-Review |
Abstract/OtherAbstract:
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We use electric force microscopy (EFM) to study the response of supported few-layer hexagonal boron nitride (h-BN) to an electric field applied by the EFM tip. Our results show an anomalous behavior in the dielectric response of h-BN atop Si oxide for different bias polarities: for a positive bias applied to the tip, h-BN layers respond with a larger dielectric constant than the dielectric constant of the substrate, while for a negative bias, the h-BN dielectric constant appears to be smaller. Based on ab initio calculations, we propose that this behavior is due to a water layer confined between the Si oxide substrate and h-BN layers. This hypothesis was experimentally confirmed by sample annealing and also by a comparative analysis with h-BN on a non-polar substrate. |
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Authors:
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C K Oliveira; M J S Matos; M S C Mazzoni; H Chacham; B R A Neves |
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Publication Detail:
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Type: Journal Article Date: 2012-04-05 |
Journal Detail:
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Title: Nanotechnology Volume: 23 ISSN: 1361-6528 ISO Abbreviation: Nanotechnology Publication Date: 2012 May |
Date Detail:
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Created Date: 2012-04-06 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101241272 Medline TA: Nanotechnology Country: England |
Other Details:
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Languages: eng Pagination: 175703 Citation Subset: IM |
Affiliation:
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Departamento de Física, ICEx, Universidade Federal de Minas Gerais-UFMG, CP 702, 30123-970 Belo Horizonte, Brazil. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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