Document Detail

Anomalous Hall effect in field-effect structures of (Ga,Mn)As.
MedLine Citation:
PMID:  20366448     Owner:  NLM     Status:  PubMed-not-MEDLINE    
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance sigma(xy) has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between sigma(xy) and sigma(xx), similar to the one observed previously for thicker samples, is recovered.
D Chiba; A Werpachowska; M Endo; Y Nishitani; F Matsukura; T Dietl; H Ohno
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Publication Detail:
Type:  Journal Article     Date:  2010-03-12
Journal Detail:
Title:  Physical review letters     Volume:  104     ISSN:  1079-7114     ISO Abbreviation:  Phys. Rev. Lett.     Publication Date:  2010 Mar 
Date Detail:
Created Date:  2010-04-06     Completed Date:  2010-06-28     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0401141     Medline TA:  Phys Rev Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  106601     Citation Subset:  -    
Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075, Japan.
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