| 40keV atomic resolution TEM. | |
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MedLine Citation:
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PMID: 22356786 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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Here we present the first atomic resolution TEM imaging at 40keV using an aberration-corrected, monochromated source TEM. Low-voltage High-Resolution Electron Microscopy (LVHREM) has several advantages, including increased cross-sections for inelastic and elastic scattering, increased contrast per electron and improved spectroscopy efficiency, decreased delocalization effects and reduced knock-on damage. Together, these often improve the contrast to damage ratio obtained on a large class of samples. Third-order aberration correction now allows us to operate the TEM at low energies while retaining atomic resolution, which was previously impossible. At low voltage the major limitation to resolution becomes the chromatic aberration limit. We show that using a source monochromator we are able to reduce the effect of chromatic aberration and achieve a usable high-resolution limit at 40keV to less than 1Å. We show various materials' examples of the application of the technique to image graphene and silicon, and compare atomic resolution images with electron multislice simulations. |
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Authors:
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David C Bell; Christopher J Russo; Dmitry V Kolmykov |
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Publication Detail:
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Type: JOURNAL ARTICLE Date: 2011-12-29 |
Journal Detail:
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Title: Ultramicroscopy Volume: 114C ISSN: 1879-2723 ISO Abbreviation: - Publication Date: 2011 Dec |
Date Detail:
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Created Date: 2012-2-23 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 7513702 Medline TA: Ultramicroscopy Country: - |
Other Details:
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Languages: ENG Pagination: 31-37 Citation Subset: - |
Copyright Information:
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Copyright © 2012 Elsevier B.V. All rights reserved. |
Affiliation:
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School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, United States; Center for Nanoscale Systems, Harvard University, Cambridge, MA, United States. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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