Document Detail


40keV atomic resolution TEM.
MedLine Citation:
PMID:  22356786     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Here we present the first atomic resolution TEM imaging at 40keV using an aberration-corrected, monochromated source TEM. Low-voltage High-Resolution Electron Microscopy (LVHREM) has several advantages, including increased cross-sections for inelastic and elastic scattering, increased contrast per electron and improved spectroscopy efficiency, decreased delocalization effects and reduced knock-on damage. Together, these often improve the contrast to damage ratio obtained on a large class of samples. Third-order aberration correction now allows us to operate the TEM at low energies while retaining atomic resolution, which was previously impossible. At low voltage the major limitation to resolution becomes the chromatic aberration limit. We show that using a source monochromator we are able to reduce the effect of chromatic aberration and achieve a usable high-resolution limit at 40keV to less than 1Å. We show various materials' examples of the application of the technique to image graphene and silicon, and compare atomic resolution images with electron multislice simulations.
Authors:
David C Bell; Christopher J Russo; Dmitry V Kolmykov
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2011-12-29
Journal Detail:
Title:  Ultramicroscopy     Volume:  114C     ISSN:  1879-2723     ISO Abbreviation:  -     Publication Date:  2011 Dec 
Date Detail:
Created Date:  2012-2-23     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  7513702     Medline TA:  Ultramicroscopy     Country:  -    
Other Details:
Languages:  ENG     Pagination:  31-37     Citation Subset:  -    
Copyright Information:
Copyright © 2012 Elsevier B.V. All rights reserved.
Affiliation:
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, United States; Center for Nanoscale Systems, Harvard University, Cambridge, MA, United States.
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